{"id":"ref_90725fecdbedd331973449439ee22c90","kind":"device","model":"20XYS06001 · ThinkPad X1 Yoga Gen 6","source":{"path":"Convertible/Lenovo/ThinkPad/ThinkPad X1 Yoga Gen 6 20XYS06001/5A189BDB4802","sha256":"760552a9f29bd6f7adf9aa77dc392d20851333bf7d77a2a1d201436b260abd7d","revision":"57b21bc6fdd863380e99c228c22aafcd1509528c","repository":"https://github.com/linuxhw/DMI"},"topology":[],"categoryId":"hardware/systems/unclassified-system","components":[],"identifiers":[],"manufacturer":"LENOVO","observations":[{"id":"dmi_9b547a2447bbd6bd2fd113a01ecfb652","parts":[{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":0,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller0-ChannelA","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 0","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":1,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller0-ChannelB","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 1","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":2,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller0-ChannelC","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 2","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":3,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller0-ChannelD","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 3","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":4,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller1-ChannelA","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 0","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":5,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller1-ChannelB","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 1","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":6,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller1-ChannelC","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 2","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_b2b6edae4751579d13e0acf5216ab7be","name":"UBE3D4AA-MGCR","slot":7,"attributes":{"Rank":"2","Size":"2 GB","Type":"LPDDR4","Speed":"4267 MT/s","Locator":"Controller1-ChannelD","Data Width":"16 bits","Form Factor":"Row Of Chips","Part Number":"UBE3D4AA-MGCR","Total Width":"16 bits","Type Detail":"Synchronous","Bank Locator":"BANK 3","Manufacturer":"Samsung","Memory Technology":"DRAM","Configured Voltage":"0.6 V","Configured Memory Speed":"4267 MT/s"},"partNumber":"UBE3D4AA-MGCR","referenceId":"ref_5b8b2795b9a2883caeb302709c81cb2b","manufacturer":"Samsung","componentClass":"MEMORY"},{"id":"dop_833adbbbf6a48d1cc9dc2267ae29e04d","name":"11th Gen Intel(R) Core(TM) i5-1145G7 @ 2.60GHz","slot":8,"attributes":{"Type":"Central Processor","Family":"Core i5","Status":"Populated, Enabled","Version":"11th Gen Intel(R) Core(TM) i5-1145G7 @ 2.60GHz","Max Speed":"2600 MHz","Core Count":"4","Manufacturer":"Intel(R) Corporation","Thread Count":"8","Current Speed":"2600 MHz","Socket Designation":"U3E1"},"partNumber":null,"referenceId":"ref_3819131a09905f4b7c2393d94d9047d1","manufacturer":"Intel(R) Corporation","componentClass":"CPU"},{"id":"dop_a8c9c25bd9bc88217b1242d17c7cbef9","name":"5B10W13974","slot":9,"attributes":{"Name":"5B10W13974","Manufacturer":"Celxpert","Design Voltage":"15440 mV","Design Capacity":"57000 mWh"},"partNumber":null,"referenceId":"ref_66a2bedb7e01333a1ea7b73ef1d44b92","manufacturer":"Celxpert","componentClass":"BATTERY"}],"source":{"path":"Convertible/Lenovo/ThinkPad/ThinkPad X1 Yoga Gen 6 20XYS06001/5A189BDB4802","sha256":"760552a9f29bd6f7adf9aa77dc392d20851333bf7d77a2a1d201436b260abd7d","revision":"57b21bc6fdd863380e99c228c22aafcd1509528c","repository":"https://github.com/linuxhw/DMI"},"license":"CC-BY-4.0","boardIds":["ref_119efa346b6c8bd72760fd060bbec066"],"firmware":[{"Vendor":"LENOVO","Version":"N32ET90W (1.66 )","ROM Size":"32 MB","Release Date":"11/20/2023","BIOS Revision":"1.66","Firmware Revision":"1.36"}],"relation":"reported-installed","systemId":"ref_90725fecdbedd331973449439ee22c90","memoryArrays":[{"Use":"System Memory","Location":"System Board Or Motherboard","Maximum Capacity":"4048 GB","Number Of Devices":"8"}],"verification":"UNVERIFIED"}],"specifications":{"attribution":"Linux Hardware Project and contributors","sourceSystem":{"Family":"ThinkPad X1 Yoga Gen 6","Version":"ThinkPad X1 Yoga Gen 6","Manufacturer":"LENOVO","Product Name":"20XYS06001"},"sourceLicense":"CC-BY-4.0","observedPartSearch":["UBE3D4AA-MGCR","Samsung","16 bits","2 GB","Row Of Chips","Controller0-ChannelA","BANK 0","LPDDR4","Synchronous","4267 MT/s","2","0.6 V","DRAM","Controller0-ChannelB","BANK 1","Controller0-ChannelC","BANK 2","Controller0-ChannelD","BANK 3","Controller1-ChannelA","Controller1-ChannelB","Controller1-ChannelC","Controller1-ChannelD","11th Gen Intel(R) Core(TM) i5-1145G7 @ 2.60GHz","Intel(R) Corporation","U3E1","Central Processor","Core i5","2600 MHz","Populated, Enabled","4","8","5B10W13974","Celxpert","57000 mWh","15440 mV"],"sourceComputerType":"Convertible","observationSemantics":"Reported sample configuration. Not manufacturer validation, not a complete BOM and not universal compatibility."},"commercialStatus":"reference-only","unresolvedRelations":[],"classificationStatus":"source-kind-only"}